Effect of irradiation by He+ and Ga+ ions on the 2D‐exciton susceptibility of InGaAs/GaAs quantum‐well structures

By  

PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 252, Iss. 9, 2015-09 ,pp. : 1950-1954

John Wiley & Sons Inc

Access to resources Recommend Favorite

Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers

By Kuo Y.-K.   Chen J.-R.   Chen M.-L.   Liou B.-T.  

Applied Physics B, Vol. 86, Iss. 4, 2007-03 ,pp. : 623-631

Springer Publishing Company

Access to resources Recommend Favorite

Optimisation of growth temperature and post-growth annealing for GaInNAs/GaNAs/GaAs quantum-well structures emitting at 1.3 m

By Fedorenko Y.   Jouhti T.   Pavelescu E.-M.   Karirinne S.   Kontinnen J.   Pessa M.  

Thin Solid Films, Vol. 440, Iss. 1, 2003-09 ,pp. : 195-197

Elsevier

Access to resources Recommend Favorite

Luminescence properties of InGaN‐based dual‐wavelength light‐emitting diodes with different quantum‐well arrangements

By  

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 212, Iss. 5, 2015-05 ,pp. : 954-959

John Wiley & Sons Inc

Access to resources Recommend Favorite

InGaAs/GaAs photorefractive multiple quantum well device in quantum confined Stark geometry

By Kageshima H.   Iwamoto S.   Nishioka M.   Someya T.   Fukutani K.   Arakawa Y.   Shimura T.   Kuroda K.  

Applied Physics B, Vol. 72, Iss. 6, 2001-05 ,pp. : 685-689

Springer Publishing Company

Access to resources Recommend Favorite