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IOP Publishing

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Corrigendum: Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2 gate dielectric

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Analysis of AlGaN/GaN high electron mobility transistors failure mechanism under semi-on DC stress

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Breakdown voltage enhancement of AlGaN/GaN high electron mobility transistors by polyimide/chromium composite thin film passivation

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High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs

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