Nitride-based blue LEDs with GaN/SiN double buffer layers

Author： Kuo C.H. Chang S.J. Su Y.K. Wang C.K. Wu L.W. Sheu J.K. Wen T.C. Lai W.C. Tsai J.M. Lin C.C.

Publisher： Elsevier

ISSN： 0038-1101

Source： Solid-State Electronics, Vol.47, Iss.11, 2003-11, pp. : 2019-2022

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High-Sensitivity Nitride-Based Ultraviolet Photosensors with a Low-Temperature AlGaN Interlayer

By Lee K.

Journal of Electronic Materials, Vol. 39, Iss. 1, 2010-01 ,pp. : 29-33

Springer Publishing Company

Access to resources Recommend Favorite

Effects of the p-AlInGaN/GaN superlattices' structure on the performance of blue LEDs

By Na Liu Xiaoyan Yi Meng Liang Enqing Guo Xiangxu Feng Zhao Si Xiaoli Ji Xuecheng Wei Hongxi Lu Zhiqiang Liu Ning Zhang Junxi Wang Jinmin Li

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 24010-24013

IOP Publishing

Access to resources Recommend Favorite

Ballistic transport in InGaN-based LEDs: impact on efficiency

By Özgür Ü Ni X Li X Lee J Liu S Okur S Avrutin V Matulionis A Morkoç H

Semiconductor Science and Technology, Vol. 26, Iss. 1, 2011-01 ,pp. : 14022-14033

IOP Publishing

Access to resources Recommend Favorite

AlGaN/GaN HEMTs with very thin buffer on Si (111) for nanosystems applications

By Leclaire P Chenot S Buchaillot L Cordier Y Théron D Faucher M

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115018-115026

IOP Publishing

Access to resources Recommend Favorite

GaN/AlGaN superlattices for p contacts in LEDs

By Duboz Jean-Yves

Semiconductor Science and Technology, Vol. 29, Iss. 3, 2014-03 ,pp. : 35017-35023

IOP Publishing

Access to resources Recommend Favorite