Near infra-red photoluminescence of Nd 3+ in hydrogenated amorphous silicon sub-nitrides a-SiN x :H

Author： Biggemann D.   Tessler L.R.  

Publisher： Elsevier

ISSN： 0921-5107

Source： Materials Science and Engineering: B, Vol.105, Iss.1, 2003-12, pp. : 188-191

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

The near-infrared photoluminescence of GaAs epilayers grown on Si

By Liang J.   Li P.   Gao Y.   Zhao J.  

Journal of Materials Science, Vol. 32, Iss. 16, 1997-12 ,pp. : 4377-4382

Springer Publishing Company

Access to resources Recommend Favorite

Enhanced Absorption of Single Silicon Nanowire with Si3N4 Shell for Photovoltaic Applications

By  

Advanced Materials Research, Vol. 2015, Iss. 1090, 2015-03 ,pp. : 173-177

Trans Tech Publications

Access to resources Recommend Favorite

Temperature independent Er 3+ photoluminescence lifetime in a-Si:H and a-SiO x :H

By Tessler L.R.   Biggemann D.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 165-168

Elsevier

Access to resources Recommend Favorite

The infra-red photoresponse of erbium-doped silicon nanocrystals

By Kenyon A.J.   Bhamber S.S.   Pitt C.W.  

Materials Science and Engineering: B, Vol. 105, Iss. 1, 2003-12 ,pp. : 229-234

Elsevier

Access to resources Recommend Favorite

Microwave Dielectric Properties of (Ca0.8Sr0.2)x(Li0.5Nd0.5)1-xTiO3 Ceramics

By  

Advanced Materials Research, Vol. 2015, Iss. 1095, 2015-04 ,pp. : 583-589

Trans Tech Publications

Access to resources Recommend Favorite