Room temperature 1.5 m electroluminescnence from GaInP/Er,O-codoped GaAs/GaInP double heterostructure injection-type light emitting diodes grown by organometallic vapor phase epitaxy

Author： Fujiwara Y.   Koizumi A.   Urakami A.   Yoshikane T.   Inoue K.   Takeda Y.  

Publisher： Elsevier

ISSN： 0921-5107

Source： Materials Science and Engineering: B, Vol.105, Iss.1, 2003-12, pp. : 56-59

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