Designing two-dimensional electron gas in AlGaN/InGaN/GaN heterostructures through the incorporated InGaN layer

By Chu R.M.   Zheng Y.D.   Zhou Y.G.   Gu S.L.   Shen B.   Zhang R.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 207-210

Elsevier

Access to resources Recommend Favorite

Effect of surface treatments on Schottky contact on n-Al x Ga 1-x N/GaN heterostructures

By Liu J.   Shen B.   Zhou Y.G.   Zhou H.M.   Wang M.J.   Zheng Z.W.   Zhang R.   Shi Y.   Zheng Y.D.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 133-137

Elsevier

Access to resources Recommend Favorite

Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications

By Maeda N.   Tsubaki K.   Saitoh T.   Tawara T.   Kobayashi N.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 211-217

Elsevier

Access to resources Recommend Favorite

Ohmic contact and interfacial reaction of Ti/Al/Pt/Au metallic multi-layers on n-Al x Ga 1-x N/GaN heterostructures

By Shen B.   Zhou H.M.   Liu J.   Zhou Y.G.   Zhang R.   Shi Y.   Zheng Y.D.   Someya T.   Arakawa Y.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 197-201

Elsevier

Access to resources Recommend Favorite

Electron transport in GaN(ZB) and AlN(WZ)

By Rodrigues Clóves  

Journal of Materials Science, Vol. 42, Iss. 1, 2007-01 ,pp. : 396-400

Springer Publishing Company

Access to resources Recommend Favorite