Author： Nakagomi S. Okuda K. Kokubun Y.
Publisher： Elsevier
ISSN： 0925-4005
Source： Sensors and Actuators B: Chemical, Vol.96, Iss.1, 2003-11, pp. : 364-371
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Electrical and optical properties of WO 3 thin films
By Regragui M. Jousseaume V. Addou M. Outzourhit A. Bernede J.C. El Idrissi B.
Thin Solid Films, Vol. 397, Iss. 1, 2001-10 ,pp. :
Access to resources
Recommend
The preparation and gas sensitive property of Pt-WO 3 thin film
By Nha N.V. Ngoc N.T.B. Hung N.V.
Thin Solid Films, Vol. 334, Iss. 1, 1998-12 ,pp. :
Electrical Properties and Interface Structure of SiC MOSFETs with Barium Interface Passivation
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Influence of Phosphorus Implantation on Electrical Properties of Al/SiO2/4H-SiC MOS Structure
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :