Charge-storage effects in a metal-insulator-semi-conductor structure containing germanium nano-crystals formed by rapid thermal annealing of an electron-beam evaporated germanium layer

Author： Heng C.L.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.78, Iss.8, 2004-05, pp. : 1181-1186

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Synthesizing germanium nanocrystals in amorphous silicon oxide by rapid thermal annealing

By Choi W. K.   H.Thio H.   Ng S. P.   Cheong B. A.  

Philosophical Magazine B, Vol. 80, Iss. 4, 2000-04 ,pp. : 729-739

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effects of gamma irradiation on electrical parameters of metal–insulator–semiconductor structure with silicon nitride interfacial insulator layer

By Ertuğrul Raziye   Tataroğlu Adem  

Radiation Effects and Defects in Solids, Vol. 169, Iss. 9, 2014-09 ,pp. : 791-799

Taylor & Francis Ltd

Access to resources Recommend Favorite

Germanium liquid crystals

By Thurmes William   More Kundalika   Meadows Michael   O'Neill Matthew   Vohra Rohini   Wand Michael  

Liquid Crystals, Vol. 36, Iss. 5, 2009-05 ,pp. : 461-477

Taylor & Francis Ltd

Access to resources Recommend Favorite

Structural and thermal properties of a Bi nano-plane embedded in amorphous germanium

By Haro-Poniatowski E.  

Applied Physics A, Vol. 79, Iss. 4-6, 2004-09 ,pp. : 1299-1302

Springer Publishing Company

Access to resources Recommend Favorite

Effect of annealing temperature on the electrical properties of Au/Ta2O5/n-GaN metal–insulator–semiconductor (MIS) structure

By Prasanna Lakshmi B.   Rajagopal Reddy V.   Janardhanam V.   Siva Pratap Reddy M.   Lee Jung-Hee  

Applied Physics A, Vol. 113, Iss. 3, 2013-11 ,pp. : 713-722

Springer Publishing Company

Access to resources Recommend Favorite