Author： Pulci O. Marsili M. Gori P. Palummo M. Cricenti A. Bechstedt F. Del Sole R.
Publisher： Springer Publishing Company
ISSN： 0947-8396
Source： Applied Physics A, Vol.85, Iss.4, 2006-12, pp. : 361-369
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Atomistic aspects of diffusion and growth on the Si and Ge (111) surfaces
By Kaxiras E.
Thin Solid Films, Vol. 272, Iss. 2, 1996-01 ,pp. :
Access to resources
Recommend
Multilayer relaxation features on (100) and (111) surfaces of -SiC
Thin Solid Films, Vol. 286, Iss. 1, 1996-09 ,pp. :
Influence of P, As and Ga doping on electronic structure of Al/Si(111) interface
By Zavodinsky V.G. Kuyanov I.A.
Vacuum, Vol. 48, Iss. 3, 1997-03 ,pp. :
Structure and electronic properties of ultrathin gold films on vicinal silicon(111)
By Schock M. Surgers C. v. Lohneysen H.
Thin Solid Films, Vol. 428, Iss. 1, 2003-03 ,pp. :