Shrinking transceivers drive InP integration

Publisher： Elsevier

ISSN： 0961-1290

Source： III-Vs Review, Vol.16, Iss.5, 2003-06, pp. : 42-45

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Routes for the integration of high and low dielectric constant oxides on InP

By Vasco E. Zaldo C.

Materials Science in Semiconductor Processing, Vol. 5, Iss. 2, 2002-04 ,pp. : 183-187

Elsevier

Access to resources Recommend Favorite

InP - the dream, the reality and the roadmap

By Purvis G.

III-Vs Review, Vol. 16, Iss. 5, 2003-06 ,pp. : 30-32

Elsevier

Access to resources Recommend Favorite

Vitesse wins InP from DARPA

III-Vs Review, Vol. 16, Iss. 6, 2003-08 ,pp. : 15-15

Elsevier

Access to resources Recommend Favorite

Schottky barriers based on metal nanoparticles deposited on InP epitaxial layers

By Yatskiv Roman Grym Jan

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45006-45010

IOP Publishing

Access to resources Recommend Favorite

Si takes SiGe, GaAs & InP into its roadmap

By Purvis G.

III-Vs Review, Vol. 16, Iss. 6, 2003-08 ,pp. : 2-2

Elsevier

Access to resources Recommend Favorite