Effect of the built-in electric field on optical and electrical properties of AlGaAs/InGaAs/GaAs P-HEMT nanoheterostructures

Author： Khabibullin R.   Vasil'evskii I.   Galiev G.   Klimov E.   Ponomarev D.   Gladkov V.   Kulbachinskii V.   Klochkov A.   Uzeeva N.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7826

Source： Semiconductors, Vol.45, Iss.5, 2011-05, pp. : 657-662

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