Characteristics study of 2DEG transport properties of AlGaN/GaN and AlGaAs/GaAs-based HEMT

Author: Lenka T.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7826

Source: Semiconductors, Vol.45, Iss.5, 2011-05, pp. : 650-656

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract