![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Author: Aleksandrov O.
Publisher: MAIK Nauka/Interperiodica
ISSN: 1063-7826
Source: Semiconductors, Vol.45, Iss.6, 2011-06, pp. : 705-712
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Diffusion in porous silicon carbide
By Pankratov E.
Physics of the Solid State, Vol. 53, Iss. 5, 2011-05 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Stabilization of boron carbide via silicon doping
Journal of Physics: Condensed Matter, Vol. 27, Iss. 1, 2015-01 ,pp. :
![](/images/ico/o.png)
![](/images/ico/ico5.png)
Superconductivity of hexagonal heavily-boron doped silicon carbide
Journal of Physics: Conference Series , Vol. 150, Iss. 5, 2009-03 ,pp. :
![](/images/ico/ico_close.png)
![](/images/ico/ico5.png)
Shock-wave strength properties of boron carbide and silicon carbide.
Le Journal de Physique IV, Vol. 04, Iss. C8, 1994-09 ,pp. :