Author： Moiseev K. Lesnikov V. Podolski V. Kudriavtsev Yu. Kudriavtseva O. Escobosa A. Sanchez-Resendiz V.
Publisher： MAIK Nauka/Interperiodica
ISSN： 1063-7826
Source： Semiconductors, Vol.45, Iss.6, 2011-06, pp. : 771-775
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Abstract
Nanotechnology of obtainment of diluted magnetic semiconductors based on the GaInAsSb compounds is developed using the laser deposition of Mn atoms on the surface of the epitaxial layer of a quaternary alloy obtained by liquid-phase epitaxy. Fabricated heterostructures were studied using high-resolution X-ray diffraction for the Bragg and grazing diffraction geometries, and the layer-by-layer analysis is performed by secondary-ion mass spectrometry. It is established that the near-boundary region of the Ga0.96In0.04As0.11Sb0.89 layer near the deposition surface of atomic Mn exhibits the presence of a quinary compound with Mn atoms in the lattice and Mn3As2-type binary inclusions. Saturation of the GaIn(Mn)AsSb multicomponent diluted semiconductor with the Mn compounds makes it possible to specify the concentration of the magnetic impurity in the crystal and control the magnetic properties of the heterostructure.
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