Impurity centers of tin in glassy arsenic chalcogenides

Author: Bordovsky G.   Dashina A.   Marchenko A.   Seregin P.   Terukov E.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7826

Source: Semiconductors, Vol.45, Iss.6, 2011-06, pp. : 783-787

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

119Sn atoms produced by radioactive decay of 119Sb impurity atoms in the structure of As x S1 − x and As x Se1 − x glasses are stabilized in the form of Sn2+ and Sn4+ ions at arsenic sites and correspond to ionized states of the amphoteric two-electron center with negative correlation energy (Sn2+ is an ionized acceptor, and Sn4+ is an ionized donor), whereas the neutral state of the Sn3+ center is unstable. The fraction of Sn4+ states increases with chalcogen content in glass. 119Sn atoms produced by radioactive decay of 119m Te impurity atoms in the structure of As x S1 − x and As x Se1 − x glasses are stabilized at chalcogen sites (they are electrically inactive) and arsenic sites, and the fraction of arsenic atoms decreases with the chalcogen content in glass.