Erratum to: “Electronic States on Silicon Surface after Deposition and Annealing of SiO x Films“

Author： Vlasenko N.   Oleksenko P.   Denisova Z.   Sopinskii N.   Veligura L.   Gule E.   Litvin O.   Mukhlyo M.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7826

Source： Semiconductors, Vol.45, Iss.6, 2011-06, pp. : 836-836

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Electronic states on silicon surface after deposition and annealing of SiO x films

By Vlasenko N.   Oleksenko P.   Denisova Z.   Sopinskii N.   Veligura L.   Gule E.   Litvin O.   Mukhlyo M.  

Semiconductors, Vol. 45, Iss. 5, 2011-05 ,pp. : 587-592

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

The effect of annealing on the electroluminescence of SiO2 layers with excess silicon

By Baraban A.   Egorov D.   Petrov Yu.   Miloglyadova L.  

Technical Physics Letters, Vol. 30, Iss. 2, 2004-02 ,pp. : 85-87

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

SURFACE MECHANISMS IN THE UVCVD OF SiO2 FILMS

By  

Le Journal de Physique IV, Vol. 02, Iss. C2, 1991-09 ,pp. : C2-357-C2-364

Edp Sciences

Access to resources Recommend Favorite

Low-temperature deposition of ultrathin SiO2 films on Si substrates

By  

Journal of Physics: Conference Series , Vol. 514, Iss. 1, 2014-05 ,pp. : 50-54

IOP Publishing

Access to resources Recommend Favorite

GRAIN BOUNDARY DIFFUSION IN POLYCRYSTALLINE SILICON FILMS ON SiO2

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C1, 1982-10 ,pp. : C1-363-C1-368

Edp Sciences

Access to resources Recommend Favorite