MOS Capacitance—Voltage Characteristics: IV. Trapping Capacitance from 3-Charge-State Impurities

Author: Binbin Jie   Chihtang Sah  

Publisher: IOP Publishing

ISSN: 1674-4926

Source: Journal of Semiconductors, Vol.33, Iss.1, 2012-01, pp. : 11001-11019

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Abstract