Frequency dependence of capacitance of Au/n-GaAs Schottky diode under hydrostatic pressure

By Çankaya GÜven  

International Journal of Electronics, Vol. 89, Iss. 10, 2002-01 ,pp. : 745-752

Taylor & Francis Ltd

Access to resources Recommend Favorite

Comparison of Current-Voltage Characteristics of n- and p-Type 6H-SiC Schottky Diodes

By Zhang Q.   Madangarli V.   Tarplee M.   Sudarshan T.S.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 196-201

Springer Publishing Company

Access to resources Recommend Favorite

Advantages of InGaN/GaN light emitting diodes with p-GaN grown under high pressure

By  

Journal of Semiconductors, Vol. 35, Iss. 11, 2014-11 ,pp. : 114007-114010

IOP Publishing

Access to resources Recommend Favorite

Defect generation in InGaN/GaN light-emitting diodes under forward and reverse electrical stresses

By Cao X.A.   Sandvik P.M.   LeBoeuf S.F.   Arthur S.D.  

Microelectronics Reliability, Vol. 43, Iss. 12, 2003-12 ,pp. : 1987-1991

Elsevier

Access to resources Recommend Favorite

The forward bias current density-voltage-temperature (J-V-T) characteristics of Al-SiO2-pSi (MIS) Schottky diodes

By Ozdemir Selahattin  

International Journal of Electronics, Vol. 98, Iss. 6, 2011-06 ,pp. : 699-712

Taylor & Francis Ltd

Access to resources Recommend Favorite