

Period of time: 2015年10期
Publisher: IOP Publishing
Founded in: 1988
Total resources: 33
ISSN: 1674-4926
Subject: TN Radio Electronics, Telecommunications Technology
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Journal of Semiconductors,volume 36,issue 10
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Packaging investigation of optoelectronic devices
By Zhike Zhang,Yu Liu,Jianguo Liu,Ninghua Zhu in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
Electro-magnetic weak coupling optical polaron and temperature effect in quantum dot
By Tiotsop M.,Fotue A. J.,Kenfack S. C.,Issofa N.,Wirngo A. V.,Djemmo M. P. Tabue,Fotsin H.,Fai L. C. in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
First-principle study on energy gap of CNT superlattice structure
By Zhonghua Yang,Guili Liu,Yingdong Qu,Rongde Li in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
By Zhuomao Zhu,Baoan Bian,Haifeng Shi in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
By Xinjun Ma,Boyu Xiao,Yong Sun,Jinglin Xiao in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
Coupling effect of quantum wells on band structure
By Jie Chen,Weiyou Zeng in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
By Hongqi Jing,Li Zhong,Yuxi Ni,Junjie Zhang,Suping Liu,Xiaoyu Ma in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
ZnS thin films deposition by thermal evaporation for photovoltaic applications
By Benyahia K.,Benhaya A.,Aida M. S. in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
The influence of Fe doping on the surface topography of GaN epitaxial material
By Lei Cui,Haibo Yin,Lijuan Jiang,Quan Wang,Chun Feng,Hongling Xiao,Cuimei Wang,Jiamin Gong,Bo Zhang,Baiquan Li,Xiaoliang Wang,Zhanguo Wang in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.
Ambipolar organic heterojunction transistors based on F16CuPc/CuPc with a MoO3 buffer layer
By Mingdong Yi,Ning Zhang,Linghai Xie,Wei Huang in (2015)
Journal of Semiconductors,volume 36,issue 10 , Vol. 36, Iss. 10, 2015-10 , pp.