Journal of Materials Science: Materials in Electronics,volume 16,issue 2  (02-2014)

Period of time： 2014年2期

Publisher： Springer Publishing Company

Founded in： 1990

Total resources： 58

ISSN： 0957-4522

Subject： TB General Industrial Technology

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Journal of Materials Science: Materials in Electronics,volume 16,issue 2

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The electrical behavior of laminated conductive polymer composite at low temperatures

By Yasin S.,Zihlif A.,Ragosta G. in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 63-69

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Effect of N2 gas annealing and SiO2 barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO2 conducting film

By Lim Tae-Young,Kim Chang-Yeoul,Kim Bum-Suk,Choi Bong,Shim KwangBo in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 71-76

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Comparison of theoretical predictions and experimental values of the dielectric constant of epoxy/BaTiO3 composite embedded capacitor films

By Cho Sung-Dong,Lee Sang-Yong,Hyun Jin-Gul,Paik Kyung-Wook in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 77-84

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Dilution effects on X-ray photoelectron spectra of La0.8Sr0.2MnO3 with SiO2

By Kohiki Shigemi,Ishida Yoshihisa,Kumashiro Takeshi,Shimooka Hirokazu,Tajiri Takayuki,Deguchi Hiroyuki,Oku Masaoki in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 85-88

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UV-cured hybrid inorganic-organic polymer electrolyte based on organically modified polysiloxane

By Qiu Wei-li,Ma Xiao-Hua,Yang Qing-he,Fu Yan-bao,Zong Xiang-fu in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 89-95

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The structural properties of Gex Sb40−x Se60 system

By Farid A.,Fouad S.,Ammar A. in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 97-101

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Annealing effects on the structural and optical properties of gallium oxide nanowires

By Kim Hyoun,Kim Nam,Lee Chongmu in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 103-105

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Properties of LT-AlGaN films and HT-GaN films using LT-AlGaN buffer layers grown on (0001) sapphire substrates

By Wang Cheng-Liang,Gong Jyh-Rong in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 107-110

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Electrodeposition of nickel selenide thin films in the presence of triethanolamine as a complexing agent

By Zainal Z.,Saravanan N.,Mien H. in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 111-117

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Patterned porous silicon formed with photolithography

By Ohmukai M.,Okada K.,Tsutsumi Y. in (2005)

Journal of Materials Science: Materials in Electronics,volume 16,issue 2 , Vol. 16, Iss. 2, 2005-02 , pp. 119-121

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Total 10 item(s)