Journal of Materials Science: Materials in Electronics,volume 21,issue 10  (10-2014)

Period of time： 2014年10期

Publisher： Springer Publishing Company

Founded in： 1990

Total resources： 58

ISSN： 0957-4522

Subject： TB General Industrial Technology

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Journal of Materials Science: Materials in Electronics,volume 21,issue 10

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Editorial: The 20th anniversary of J. Mater. Sci: Materials in Electronics

By Willoughby Arthur in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 963-964

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Biomimetically-inspired photonic nanomaterials

By Parker Gregory in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 965-979

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ZrO2 thin films on Si substrate

By Wong Yew,Cheong Kuan in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 980-993

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Investigating polysilicon thin film structural changes during rapid thermal annealing of a thin film crystalline silicon on glass solar cell

By Brazil Ian,Green Martin in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 994-999

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PF127 aided preparation of super-porous TiO2 film used in highly efficient quasi-solid-state dye-sensitized solar cell

By Lan Zhang,Wu Jihuai,Lin Jianming,Huang Miaoliang in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 1000-1004

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Effect of ZnO buffer layer on AZO film properties and photovoltaic applications

By Shi J.,Huang S.,Chu J.,Zhu H.,Wang Z.,Li X.,Zhang D.,Sun Z.,Cheng W.,Huang F.,Yin X. in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 1005-1013

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A study of the growth mechanism of CVD-grown ZnO nanowires

By Wan Hong,Ruda Harry in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 1014-1019

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Kerr modulators based on polymer-dispersed liquid crystal complexes

By Niziol J.,Węgłowski R.,Kłosowicz S.,Majchrowski A.,Rakus P.,Wojciechowski A.,Kityk I.,Tkaczyk S.,Gondek E. in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 1020-1023

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Effect of barrier layer composition and thickness on structural and optical properties of TlInGaAsN/TlGaAs(N) triple quantum wells

By Kim Kang,Krishnamurthy Daivasigamani,Sakai Yuji,Seo Jong-Uk,Hasegawa Shigehiko,Asahi Hajime in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 1024-1029

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Effects of Al content on the properties of ZnO:Al films prepared by Al2O3 and ZnO co-sputtering

By Deng Zhonghua,Huang Changgang,Huang Jiquan,Wang Meili,He Hong,Wang Hai,Cao Yongge in (2010)

Journal of Materials Science: Materials in Electronics,volume 21,issue 10 , Vol. 21, Iss. 10, 2010-10 , pp. 1030-1035

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