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Taylor & Francis Ltd

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A unified model for the vertical base widening effect in silicon bipolar transistor at 77 and 300K

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High-speed electro-thermal modelling of a three-phase insulated gate bipolar transistor inverter power module

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International Journal of Electronics, Vol. 97, Iss. 2, 2010-02 ,pp. : 195-205

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Modelling of lightly doped collector of a bipolar transistor operating in quasi-saturation region

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The impact of the distributed RC effect on high frequency noise modeling of bipolar transistor

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