Computer simulation study on the noise and millimeter wave properties of InP/GaInAs heterojunction double avalanche region IMPATT diode

By Mishra J.K.   Dash G.N.   Pattanaik S.R.   Mishra I.P.  

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 401-408

Elsevier

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Computer studies of quasi Read gallium arsenide IMPATT diode: including the effect of space charge

By Banerjee J. P.   Ghosh S.   Nag B.   Ghatak K. P.  

International Journal of Electronics, Vol. 82, Iss. 4, 1997-04 ,pp. : 335-346

Taylor & Francis Ltd

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Experimental studies on the dependence of tuning properties on the diameter of the post below the cap and the cap thickness of X-band resonant cap Impatt oscillators

By Ghoshal Dibyendu  

International Journal of Electronics, Vol. 83, Iss. 6, 1997-12 ,pp. : 859-862

Taylor & Francis Ltd

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Computer-aided analysis and design of resonant-cap type microwave IMPATT sources

By Kar Subal  

International Journal of Electronics, Vol. 82, Iss. 6, 1997-06 ,pp. : 677-687

Taylor & Francis Ltd

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A three-dimensional computer model for simulation of light-trapping effects in porous silicon

By Zheng J.P.   Charbel P.T.  

Microelectronic Engineering, Vol. 66, Iss. 1, 2003-04 ,pp. : 224-232

Elsevier

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