Effect of bandgap discontinuity on the cut-off frequency, base transit time and junction capacitance of npn AlGaAs/GaAs heterojunction bipolar transistors

By Qasaimeh Omar   Zebda Yousef  

International Journal of Electronics, Vol. 84, Iss. 1, 1998-01 ,pp. : 25-36

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effects of high temperature annealing on the device characteristics of Ga 0.52 In 0.48 P/GaAs and Al 0.52 In 0.48 P/GaAs heterojunction bipolar transistors

By Yow H.   Houston P.   Button C.   David J.   Ng C.  

Journal of Electronic Materials, Vol. 27, Iss. 1, 1998-12 ,pp. : 18-24

Springer Publishing Company

Access to resources Recommend Favorite

Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

By Hwang J.   Schaff W.J.   Green B.M.   Cha H.   Eastman L.F.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 363-366

Elsevier

Access to resources Recommend Favorite

Recombination current in GaAs/AlGaAs heterostructure bipolar transistors

By Irvine A. C.   Woods R. C.  

International Journal of Electronics, Vol. 83, Iss. 6, 1997-12 ,pp. : 761-778

Taylor & Francis Ltd

Access to resources Recommend Favorite

Growth characteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors

By Garcia J.   Dua C.   Mohammadi S.   Park J.   Pavlidis D.  

Journal of Electronic Materials, Vol. 27, Iss. 5, 1998-05 ,pp. : 442-445

Springer Publishing Company

Access to resources Recommend Favorite