Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistors

Author: Hwang J.   Schaff W.J.   Green B.M.   Cha H.   Eastman L.F.  

Publisher: Elsevier

ISSN: 0038-1101

Source: Solid-State Electronics, Vol.48, Iss.2, 2004-02, pp. : 363-366

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