Author： Li Yao Xu Juyan Kong Deyi Wei Tongli
Publisher： Taylor & Francis Ltd
ISSN： 1362-3060
Source： International Journal of Electronics, Vol.88, Iss.11, 2001-11, pp. : 1141-1150
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
A base transport model for ultra-thin-base SiGe HBT
By Li Yao Kong Deyi Zhen Jiang Xu Juyan
International Journal of Electronics, Vol. 87, Iss. 11, 2000-11 ,pp. :
Access to resources
Recommend
By Knoll D. Heinemann B. Bolze D. Ehwald K. Fischer G. Krüger D. Morgenstern T. Naumann E. Schley P. Tillack B. Wolansky D.
Journal of Electronic Materials, Vol. 27, Iss. 9, 1998-09 ,pp. :
By Ramirez-Garcia E Zerounian N Aniel F Valdez-Monroy L A Rodriguez-Mendez L M Valdez-Perez D Galaz-Larios M C Enciso-Aguilar M A
Semiconductor Science and Technology, Vol. 29, Iss. 9, 2014-09 ,pp. :