Germanium content and base doping level influence on extrinsic base resistance and dynamic performances of SiGe:C heterojunction bipolar transistors

Author: Ramirez-Garcia E   Zerounian N   Aniel F   Valdez-Monroy L A   Rodriguez-Mendez L M   Valdez-Perez D   Galaz-Larios M C   Enciso-Aguilar M A  

Publisher: IOP Publishing

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.29, Iss.9, 2014-09, pp. : 95020-95027

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