Low-frequency noise measurements on submicrometre n-channel and p-channel MOSFETs at various operating regions

Author： Belahrach H.   Degerli Y.   Lavernhe F.   Karim M.   Magnan P.   Farre J.  

Publisher： Taylor & Francis Ltd

ISSN： 1362-3060

Source： International Journal of Electronics, Vol.88, Iss.4, 2001-04, pp. : 411-421

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

High frequency channel noise measurement and characterization in deep submicron MOSFETs

By Allam A.  

Analog Integrated Circuits and Signal Processing, Vol. 65, Iss. 2, 2010-11 ,pp. : 259-264

Springer Publishing Company

Access to resources Recommend Favorite

Evaluation of performance degradation factors for high-k gate dielectrics in N-channel MOSFETs

By Ohata A.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 345-349

Elsevier

Access to resources Recommend Favorite

Flicker and thermal noise in an n-channel underlap DG FinFET in a weak inversion region

By Sudhansu Kumar Pati   Pardeshi Hemant   Raj Godwin   Mohankumar N.   Chandan Kumar Sarkar  

Journal of Semiconductors, Vol. 34, Iss. 2, 2013-02 ,pp. : 24002-24007

IOP Publishing

Access to resources Recommend Favorite

N-channel power MOSFET for fast neutron detection

By Salame C.   Mialhe P.   Charles J.-P.   Khoury A.  

Microelectronics International, Vol. 19, Iss. 1, 2002-04 ,pp. : 19-22

Emerald Group Publishing Ltd

Access to resources Recommend Favorite

Semi-numerical modelling of an n-channel irradiated MOSFET

By Dasgupta S.   Chakrabarti P.  

International Journal of Electronics, Vol. 88, Iss. 3, 2001-03 ,pp. : 301-313

Taylor & Francis Ltd

Access to resources Recommend Favorite