Analytical modeling of thermal noise in deep submicron MOSFETs

By Lu Zhi-Qiang  

Analog Integrated Circuits and Signal Processing, Vol. 59, Iss. 2, 2009-05 ,pp. : 185-189

Springer Publishing Company

Access to resources Recommend Favorite

A unified model for high-frequency current noise of MOSFETs

By Teng H.-F.   Jang S.-L.   Juang M.H.  

Solid-State Electronics, Vol. 47, Iss. 11, 2003-11 ,pp. : 2043-2048

Elsevier

Access to resources Recommend Favorite

The STI stress effect on deep submicron PDSOI MOSFETs

By Jianhui Bu   Shuzhen Li   Jiajun Luo   Zhengsheng Han  

Journal of Semiconductors, Vol. 35, Iss. 3, 2014-03 ,pp. : 34008-34010

IOP Publishing

Access to resources Recommend Favorite

Low-frequency noise measurements on submicrometre n-channel and p-channel MOSFETs at various operating regions

By Belahrach H.   Degerli Y.   Lavernhe F.   Karim M.   Magnan P.   Farre J.  

International Journal of Electronics, Vol. 88, Iss. 4, 2001-04 ,pp. : 411-421

Taylor & Francis Ltd

Access to resources Recommend Favorite

An advanced explicit surface potential model physically accounting for the quantization effects in deep-submicron MOSFETs

By Pregaldiny F.   Lallement C.   van Langevelde R.   Mathiot D.  

Solid-State Electronics, Vol. 48, Iss. 3, 2004-03 ,pp. : 427-435

Elsevier

Access to resources Recommend Favorite