An analytical subthreshold current model for ballistic quantum-wire double-gate MOS transistors

By Autran J.L.   Munteanu D.   Tintori O.   Decarre E.   Ionescu A.M.  

Molecular Simulation, Vol. 31, Iss. 2-3, 2005-02 ,pp. : 179-183

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Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects

By Munteanu D.   Autran J. L.   Loussier X.   Harrison S.   Cerutti R.  

Molecular Simulation, Vol. 33, Iss. 7, 2007-06 ,pp. : 605-611

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Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

By Munteanu D.   Autran J. L.   Harrison S.   Nehari K.   Tintori O.   Skotnicki T.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 831-837

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Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects

By Martinie S.   Munteanu D.   Le Carval G.   Autran J. L.  

Molecular Simulation, Vol. 35, Iss. 8, 2009-07 ,pp. : 631-637

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A continuous surface-potential solution from accumulation to inversion for intrinsic symmetric double-gate MOSFETs

By He Jin   Zhang Lining   Zheng Rui   Zhang Jian   Chan Mansun  

Molecular Simulation, Vol. 35, Iss. 6, 2009-05 ,pp. : 448-455

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