A complete analytic surface potential-based core model for intrinsic nanowire surrounding-gate MOSFETs

By He Jin   Zhang Lining   Zhang Jian   Ma Chenyue   Liu Feilong   Chan Mansun  

Molecular Simulation, Vol. 35, Iss. 6, 2009-05 ,pp. : 483-490

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A compact model for the ballistic subthreshold current in ultra-thin independent double-gate MOSFETs

By Munteanu D.   Moreau M.   Autran J. L.  

Molecular Simulation, Vol. 35, Iss. 6, 2009-05 ,pp. : 491-497

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Compact modeling of symmetrical double-gate MOSFETs including carrier confinement and short-channel effects

By Munteanu D.   Autran J. L.   Loussier X.   Harrison S.   Cerutti R.  

Molecular Simulation, Vol. 33, Iss. 7, 2007-06 ,pp. : 605-611

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Compact model of the quantum short-channel threshold voltage in symmetric Double-Gate MOSFET

By Munteanu D.   Autran J. L.   Harrison S.   Nehari K.   Tintori O.   Skotnicki T.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 831-837

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A compact model to predict quantized sub-band energy levels and inversion layer centroids of MOSFETs with a parabolic potential well approximation

By He J.   Chan M. S.   Hu C.   Zhang X.   Wang Y. Y.  

Molecular Simulation, Vol. 31, Iss. 12, 2005-10 ,pp. : 845-850

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