Current and capacitance characteristics of a metal–insulator–semiconductor structure with an ultrathin oxide layer

Author: Fu Y.   Willander M.   Lundgren P.  

Publisher: Academic Press

ISSN: 0749-6036

Source: Superlattices and Microstructures, Vol.30, Iss.2, 2001-08, pp. : 53-60

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract