Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

By Dubey Sarvesh        

Journal of Semiconductors, Vol. 35, Iss. 10, 2014-10 ,pp. : 104002-104008

IOP Publishing

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Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs

By Rawat Gopal   Kumar Sanjay   Goel Ekta   Kumar Mirgender   Dubey Sarvesh   Jit S.  

Journal of Semiconductors, Vol. 35, Iss. 8, 2014-08 ,pp. : 84001-84008

IOP Publishing

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Analytical modeling of drain current and RF performance for double-gate fully depleted nanoscale SOI MOSFETs

By Sharma Rajiv   Pandey Sujata   Shail Bala Jain  

Journal of Semiconductors, Vol. 33, Iss. 2, 2012-02 ,pp. : 24001-24008

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Analytical study of subthreshold behaviour of double gate bilayer graphene field effect transistors

By Saeidmanesh M   Khaledian M   Ghadiry M   Ismail Razali  

Semiconductor Science and Technology, Vol. 29, Iss. 11, 2014-11 ,pp. : 115011-115020

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Analytical analysis of nanoscale fully depleted Double-Gate MOSFETs including the hot-carrier degradation effects

By Ghoggali Z.   Djeffal F.  

International Journal of Electronics, Vol. 97, Iss. 2, 2010-02 ,pp. : 119-127

Taylor & Francis Ltd

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