Measurement of mean free paths for inelastic electron scattering of Si and SiO 2

By Lee C-W.   Ikematsu Y.   Shindo D.  

Journal of Electron Microscopy, Vol. 51, Iss. 3, 2002-05 ,pp. : 143-148

Oxford University Press

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First observation of SiO 2 /Si(100) interfaces by spherical aberration‐corrected high‐resolution transmission electron microscopy

By Tanaka* Nobuo  

Journal of Electron Microscopy, Vol. 52, Iss. 1, 2003-03 ,pp. : 69-73

Oxford University Press

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High-resolution transmission electron microscopy and electron energy-loss spectroscopy study of polycrystalline-Si/ZrO 2 /SiO 2 /Si metal-oxide-semiconductor structures

By Yang Jun-Mo   Kim Joong Jung   Kim Kyung-Seob   Lee Wan-Gyu   Kawasaki Masahiro  

Journal of Electron Microscopy, Vol. 55, Iss. 1, 2006-01 ,pp. : 1-5

Oxford University Press

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Contrast mechanism due to interface trapped charges for a buried SiO 2 microstructure in scanning electron microscopy

By Zhang Hai-Bo   Li Wei-Qin   Wu Dan-Wei  

Journal of Electron Microscopy, Vol. 58, Iss. 1, 2009-01 ,pp. : 15-19

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Grain boundary structure and chemical bonding state of superplastic SiO 2 -doped TZP

By Tanaka I.  

Journal of Electron Microscopy, Vol. 46, Iss. 6, 1998-01 ,pp. : 467-472

Oxford University Press

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