Author: Bobrinetskii I. I. Nevolin V. K. Stroganov A. A. Chaplygin Yu. A.
Publisher: MAIK Nauka/Interperiodica
ISSN: 1063-7397
Source: Russian Microelectronics, Vol.33, Iss.5, 2004-09, pp. : 292-297
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Abstract
A technique is developed of the deposition and electrode-bonding of single-wall carbon nanotubes. The causes are investigated of breakdown observed at the nanotube–electrode interface. A method is proposed for the conduction alteration of as-prepared bundles, using electrical breakdown. A mock-up of p-channel FET is produced from a nanotube bundle. Its static performance is measured.
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