Modeling of recombination in SiO2 under the effect of ionizing radiation by the Monte Carlo method

Author: Polunin V.   Sogoyan A.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 1063-7397

Source: Russian Microelectronics, Vol.40, Iss.3, 2011-05, pp. : 176-184

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Abstract