Three-dimensional Ge/SiGe multiple quantum wells deposited on Si(001) and Si(111) patterned substrates

By Isa F   Pezzoli F   Isella G   Meduňa M   Falub C V   Müller E   Kreiliger T   Taboada A G   von Känel H   Miglio Leo  

Semiconductor Science and Technology, Vol. 30, Iss. 10, 2015-10 ,pp. : 105001-105009

IOP Publishing

Access to resources Recommend Favorite

Performance evaluation of SiGe heterojunction bipolar transistors on virtual substrates

By Jankovic N.D.   O'Neill A.  

Solid-State Electronics, Vol. 48, Iss. 2, 2004-02 ,pp. : 277-284

Elsevier

Access to resources Recommend Favorite

Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates

By Bai J   Yu X   Gong Y   Hou Y N   Zhang Y   Wang T  

Semiconductor Science and Technology, Vol. 30, Iss. 6, 2015-06 ,pp. : 65012-65017

IOP Publishing

Access to resources Recommend Favorite

Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

By Kim Tae-Hyun   Park Jea-Gun  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45001-45005

IOP Publishing

Access to resources Recommend Favorite

Simulation and comparison of MOS inversion layer quantum mechanics effects in SiGe PMOSFET and Si PMOSFET

By Rong Y.   Jinsheng L.   Jing T.   Ruizhi Z.  

Microelectronics, Vol. 35, Iss. 2, 2004-02 ,pp. : 145-149

Elsevier

Access to resources Recommend Favorite