Capacitor-less memory cell fabricated on nano-scale strained Si on a relaxed SiGe layer-on-insulator

Author: Kim Tae-Hyun   Park Jea-Gun  

Publisher: IOP Publishing

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.28, Iss.4, 2013-04, pp. : 45001-45005

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract