Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

Author: Latt K.M.   Lee Y.K.   Seng H.L.   Osipowicz T.  

Publisher: Springer Publishing Company

ISSN: 0022-2461

Source: Journal of Materials Science, Vol.36, Iss.24, 2001-12, pp. : 5845-5851

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Abstract