Study of interfacial reactions in ionized metal plasma (IMP) deposited Al-0.5%wtCu/Ti/SiO2/Si structure

By Lee Y.K.   Latt K.M.   Jaehyung K.   Osipowicz T.   Chiam S-Y.   Lee K.  

Journal of Materials Science, Vol. 35, Iss. 23, 2000-12 ,pp. : 5857-5860

Springer Publishing Company

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Diffusion barrier properties of ionized metal plasma deposited tantalum nitride thin films between copper and silicon dioxide

By Latt K.M.   Lee Y.K.   Seng H.L.   Osipowicz T.  

Journal of Materials Science, Vol. 36, Iss. 24, 2001-12 ,pp. : 5845-5851

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Comparative study of copper films prepared by ionized metal plasma sputtering and chemical vapor deposition in the Cu/TaN/SiO2/Si multilayer structure

By Maung Latt K.   Sher-Yi C.   Osipowicz T.   Lee K.   Lee Y.K.  

Journal of Materials Science, Vol. 36, Iss. 23, 2001-12 ,pp. : 5705-5712

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Study on SiN_x passivated Cu/Ta/SiO₂/Si multilayer structure

By Latt K.M.   Park H.S.   Seng H.L.   Osipowicz T.   Lee Y.K.  

Journal of Materials Science, Vol. 37, Iss. 19, 2002-10 ,pp. : 4181-4188

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Microstructure of ZnO/Cu/TaN/SiO 2 /Si multilayers prepared by sputter deposition

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Journal of Materials Science Letters, Vol. 22, Iss. 22, 2003-11 ,pp. : 1603-1606

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