Suppression of boron diffusion due to carbon during rapid thermal annealing of SiGe based device materials—some comments

Author： Karunaratne M.   Bonar J.   Ashburn P.   Willoughby A.  

Publisher： Springer Publishing Company

ISSN： 0022-2461

Source： Journal of Materials Science, Vol.41, Iss.3, 2006-02, pp. : 1013-1016

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