Optical properties of Yb ions in GaN epilayer

By Jadwisienczak W.M.   Lozykowski H.J.  

Optical Materials, Vol. 23, Iss. 1, 2003-07 ,pp. : 175-181

Elsevier

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Optical quenching behavior related to the deep levels in unintentionally doped n-type GaN epilayers grown on sapphire substrates

By Kim N. H.   Kang T. W.   Kim T. W.  

Journal of Materials Science, Vol. 39, Iss. 20, 2004-10 ,pp. : 6343-6345

Springer Publishing Company

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Effect of annealing on neutron-transmutation-doped GaN epilayers grown on sapphire substrates

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Journal of Materials Science, Vol. 39, Iss. 9, 2004-05 ,pp. : 3217-3219

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Improvement of the crystallinity of GaN epitaxial films grown on sapphire substrates due to the use of AlN quantum dot buffer layers

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Journal of Materials Science, Vol. 40, Iss. 20, 2005-10 ,pp. : 5533-5535

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Reduction of dislocation density in GaN films on sapphire using AIN interlayers

By Chaudhuri J.   George J.T.   Kolske D.D.   Wickenden A.E.   Henry R.L.   Rek Z.  

Journal of Materials Science, Vol. 37, Iss. 7, 2002-04 ,pp. : 1449-1453

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