Phase-change characteristics of nitrogen-doped Ge₂Sb₂Te₅ films during annealing process

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Study on nitrogen doped Ge₂Sb₂Te₅ films for phase change memory

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Stress reduction during phase change in Ge₂Sb₂Te₅ by capping TiN film

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Effect of N₂ gas annealing and SiO₂ barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO₂ conducting film

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Effect of N₂ gas annealing and SiO₂ barrier on the optical transmittance and electrical resistivity of a transparent Sb-doped SnO₂ conducting film

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Journal of Materials Science, Vol. 16, Iss. 2, 2005-02 ,pp. : 71-76

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