A comprehensive structural analysis of silicon carbide layers grown by vacuum epitaxy on silicon from hydrides and hydrocarbons

Author： Orlov L.   Drozdov Yu.   Drozdov M.   Pod’yacheva O.   Vdovin V.  

Publisher： Springer Publishing Company

ISSN： 0022-4766

Source： Journal of Structural Chemistry, Vol.51, Iss.1, 2010-12, pp. : 145-151

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Properties of Silicon Layers Grown by Molecular-Beam Epitaxy

By Shengurov V.   Svetlov S.   Chalkov V.   Gorshenin G.   Shengurov D.   Denisov S.  

Inorganic Materials, Vol. 41, Iss. 11, 2005-11 ,pp. : 1131-1134

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy

By Denisov S.   Svetlov S.   Chalkov V.   Shengurov V.   Pavlov D.   Korotkov E.   Pitirimova E.   Trushin V.  

Inorganic Materials, Vol. 43, Iss. 4, 2007-04 ,pp. : 331-337

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Erbium Segregation in Silicon Layers Grown by Molecular-Beam Epitaxy

By Shengurov V.G.   Svetlov S.P.   Chalkov V.Y.   Maksimov G.A.   Krasil'nik Z.F.   Andreev B.A.   Stepikhova M.V.   Shengurov D.V.  

Inorganic Materials, Vol. 38, Iss. 5, 2002-05 ,pp. : 421-424

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Silicon carbide of 594 layers

By  

Acta Crystallographica, Vol. 3, Iss. 5, 1950-09 ,pp. : 396-397

John Wiley & Sons Inc

Access to resources Recommend Favorite

Erbium Vaporization from Silicon in Vacuum

By Shengurov V.G.   Svetlov S.P.   Chalkov V.Y.   Meshkov A.G.  

Inorganic Materials, Vol. 39, Iss. 2, 2003-02 ,pp. : 93-95

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite