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Inorganic Materials, Vol. 39, Iss. 1, 2003-01 ,pp. : 3-5

MAIK Nauka/Interperiodica

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Properties of Silicon Layers Grown by Molecular-Beam Epitaxy

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Sapphire surface preparation for the growth of silicon layers by molecular-beam epitaxy

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Erbium Segregation in Silicon Layers Grown by Molecular-Beam Epitaxy

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A comprehensive structural analysis of silicon carbide layers grown by vacuum epitaxy on silicon from hydrides and hydrocarbons

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Springer Publishing Company

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