Properties of Silicon Layers Grown by Molecular-Beam Epitaxy

Author: Shengurov V.   Svetlov S.   Chalkov V.   Gorshenin G.   Shengurov D.   Denisov S.  

Publisher: MAIK Nauka/Interperiodica

ISSN: 0020-1685

Source: Inorganic Materials, Vol.41, Iss.11, 2005-11, pp. : 1131-1134

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content