Comparative studies of defect production in heavily doped silicon under fast electron irradiation at different temperatures

Author： Emtsev V. Ehrhart P. Poloskin D. Emtsev K.

Publisher： Springer Publishing Company

ISSN： 0957-4522

Source： Journal of Materials Science: Materials in Electronics, Vol.18, Iss.7, 2007-07, pp. : 711-714

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