Investigation of forming-gas annealed CeO₂ thin film on GaN

Author： Quah Hock Cheong Kuan Hassan Zainuriah Lockman Zainovia

ISSN： 0957-4522

Source： Journal of Materials Science: Materials in Electronics, Vol.22, Iss.6, 2011-06, pp. : 583-591

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Abstract

The effects of post-deposition annealing temperatures (400, 600, 800, and 1,000°C) in forming gas (95% N₂ + 5% H₂) ambient on metal–organic decomposed cerium oxide (CeO₂) thin films deposited on n-type GaN substrate had been investigated. The occurrence of CeO₂ phase transformation was reported and presence of CeO₂, α-Ce₂O₃, and β-Ga₂O₃ had been detected, depending on the annealing temperature. As the annealing temperature increased, grain size and microstrains of CeO₂ films were, respectively, increased and reduced. Metal–oxide–semiconductor characteristics of the annealed samples were systematically investigated. The highest dielectric breakdown field was perceived by sample annealed at 400°C due to the reduction of semiconductor–oxide interface trap density and effective oxide charge.