Simulations of Scaled Sub-100 nm Strained Si/SiGe p-Channel MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Yang L.   Watling J.R.   Boriçi M.   Wilkins R.C.W.   Asenov A.   Barker J.R.   Roy S.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 363-368

Springer Publishing Company

Access to resources Recommend Favorite

“Atomistic”, Quantum and Ballistic Effects in Nanoscale MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Fiori G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 123-126

Springer Publishing Company

Access to resources Recommend Favorite

Ballistic Transport in SiGe and Strained-Si MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Curatola G.   Iannaccone G.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 309-312

Springer Publishing Company

Access to resources Recommend Favorite

Scaling MOSFETs to the Limit: A Physicists's Perspective: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Fischetti M.V.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 73-79

Springer Publishing Company

Access to resources Recommend Favorite

Quantum Effects on Transport Characteristics in Ultra-Small MOSFETs: Special Issue on the Proceedings of the INTERNATIONAL WORKSHOP ON COMPUTATIONAL ELECTRONICS (IWCE-9)

By Takeda H.   Mori N.   Hamaguchi C.  

Journal of Computational Electronics, Vol. 2, Iss. 2-4, 2003-12 ,pp. : 119-122

Springer Publishing Company

Access to resources Recommend Favorite