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Springer Publishing Company

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RF Performance of Strained SiGe pMOSFETs: Linearity and Gain

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A two-dimensional analytical subthreshold behavior analysis including hot-carrier effect for nanoscale Gate Stack Gate All Around (GASGAA) MOSFETs

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Simulations of Sub-100 nm Strained Si MOSFETs with High-κ Gate Stacks

By Yang L.   Watling J.   Adamu-Lema F.   Asenov A.   Barker J.  

Journal of Computational Electronics, Vol. 3, Iss. 3-4, 2004-10 ,pp. : 171-175

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